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LTC5535 Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth
FEATURES

DESCRIPTIO
Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 600MHz to 7GHz* Wide Input Power Range: -32dBm to 10dBm External Gain Control Precision VOUT Offset Control Low Starting Voltage: 200mV for Gain = 2 Wide VCC Range of 2.7V to 5.5V Low Operating Current: 2mA Available in a Low Profile (1mm) SOT-23 Package
The LTC(R)5535 is an RF power detector for RF applications operating in the 600MHz to 7GHz range. A temperature compensated Schottky diode peak detector and output amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single cell lithium-ion or three cell NiMH battery. The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. The LTC5535 output amplifier gain is set via external resistors. The initial starting voltage of 200mV can be precisely adjusted using the VOS pin. The LTC5535 operates with input power levels from -32dBm to 10dBm. The 12MHz baseband bandwidth is much higher than that of previous Schottky detector products.
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more information.
APPLICATIO S

802.11a, 802.11b, 802.11g, 802.15, 802.16 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector
TYPICAL APPLICATIO
Output Voltage vs RF Input Power 600MHz to 7GHz RF Power Detector
33pF RF INPUT 1
VOUT OUTPUT VOLTAGE (mV)
3600
VCC = 3.6V 3200 TA = 25C GAIN = 2 2800 VOS = 0V 2400 2000
LTC5535 VCC 6 RFIN 100pF 5 RA VOS VM
5535 TA01
VCC 0.1F
2
GND
VOUT
1600 1200
VOS REFERENCE
3
4 RB
800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12
5535 TA02
U
2GHz 600MHz 1GHz 5GHz 6GHz 7GHz 4GHz
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1
LTC5535
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW RFIN 1 GND 2 VOS 3 6 VCC 5 VOUT 4 VM
VCC, VOUT, VM, VOS .............................................. -0.3V to 6V RFIN Voltage ...................................(VCC 1.5V) to 6.5V RFIN Power (RMS) .............................................. 12dBm IVOUT .................................................................... 25mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C
ORDER PART NUMBER LTC5535ES6 S6 PART MARKING LBHK
S6 PACKAGE 6-LEAD PLASTIC TSOT-23
TJMAX = 125C, JA = 250C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 500, VOS = 0V unless otherwise noted.
PARAMETER VCC Operating Voltage IVCC Operating Current VOUT VOL (No RF Input) VOUT Output Current VOUT Bandwidth VOUT Load Capacitance VOUT Slew Rate VOUT Noise VOS Voltage Range VOS Input Current VM Voltage Range VM Input Current RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V F = 1000MHz, Pin = -25dBm F = 1000MHz, Pin = -25dBm VM = 3.6V VOS = 1V VOUT = 1.75V, VCC = 2.7V to 5.5V, VOUT < 10mV CLOAD = 33pF, RLOAD = 2k, PIN = -10dBm (Note 4) (Note 6) VRFIN = 1V Step, CLOAD = 33pF (Note 3) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination, 50 AC Output Termination

ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
TYP 2
MAX 5.5 3.5 250
UNITS V mA mV mA MHz
2.7 150 10 180 to 220 20 12
IVOUT = 0mA

33 50 1 0 -0.5 0 -0.5 600 to 7000 -32 to 10 220 0.65 1 0.5 VCC -1. 8 0.5
mVP-P V A V A MHz dBm pF
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls.
Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: See Table 1 in Applications Information section. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design.
2
U
pF V/s
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LTC5535 TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage
220 GAIN = 2 VOS = 0V 215 RF INPUT SIGNAL OFF
SUPPLY CURRENT (mA)
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
210 TA = 85C 205 200 195 190 2.5 TA = 25C TA = -40C
3
4.5 4 5 3.5 SUPPLY VOLTAGE (V)
Typical Detector Characteristics, 1000MHz, Gain = 2, VOS = 0V
3600 3200 VCC = 3.6V VOUT OUTPUT VOLTAGE (mV) 3600 3200 2800 2400 2000
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 TA = 25C TA = -40C
VOUT OUTPUT VOLTAGE (mV)
1600 1200 800 400
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
Typical Detector Characteristics, 4000MHz, Gain = 2, VOS = 0V
3600 3200 VCC = 3.6V 3600 3200
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 TA = -40C
2800 2400 2000 TA = 25C TA = -40C
VOUT OUTPUT VOLTAGE (mV)
TA = 25C
1600 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12
5535 G07
UW
5.5
5535 G01
(RLOAD = 1k = RA + RB) Typical Detector Characteristics, 600MHz, Gain = 2, VOS = 0V
3600 3200 2800 2400 2000 TA = 25C TA = -40C VCC = 3.6V
Supply Current vs Supply Voltage
2.8 2.6 2.4 TA = 25C 2.2 2.0 1.8 1.6 2.5 RF INPUT SIGNAL OFF TA = 85C
1600 1200 800 400
TA = -40C
TA = 85C
6
3
4.5 4 5 3.5 SUPPLY VOLTAGE (V)
5.5
6
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8 12
5535 G03
5535 G02
Typical Detector Characteristics, 2000MHz, Gain = 2, VOS = 0V
VCC = 3.6V 3600 3200 2800 2400 2000 TA = -40C
Typical Detector Characteristics, 3000MHz, Gain = 2, VOS = 0V
VCC = 3.6V
TA = -40C
TA = 25C
TA = 25C
1600 1200 800 400 TA = 85C
1600 1200 800 400 TA = 85C
TA = 85C
8 12
5535 G04
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8 12
5535 G05
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8 12
5535 G06
Typical Detector Characteristics, 5000MHz, Gain = 2, VOS = 0V
VCC = 3.6V 3600 3200 2800 2400 2000
Typical Detector Characteristics, 6000MHz, Gain = 2, VOS = 0V
VCC = 3.6V
TA = -40C
1600 1200 800 400
1600 1200 800 400
TA = 25C
TA = 85C
TA = 85C
TA = 85C
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8 12
5535 G08
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8 12
5535 G09
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LTC5535 TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics, 7000MHz, Gain = 2, VOS = 0V
3600 3200
VOUT OUTPUT VOLTAGE (mV)
VCC = 3.6V
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 TA = 25C TA = -40C
1600 1200 800 400
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
VOUT vs RF Input Power and VOS, 2000MHz, Gain = 2
3600 VCC = 3.6V 3200 TA = 25C 4000 3600 VOUT OUTPUT VOLTAGE (mV) 3200 2800 2400 2000 VOS = 1V
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 VOS = 0.5V
1600 1200 800 400
0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
Time Domain Response at fRF = 1900MHz, PRF = 0dBm
ASK MODULATION SIGNAL 500mV/DIV ASK MODULATION SIGNAL 100mV/DIV OUTPUT 200mV/DIV OUTPUT 500mV/DIV
TA = 25C VCC = 3.6V GAIN = 2 VOS = 0V
4
UW
(RLOAD = 1k = RA + RB) VOUT vs RF Input Power and VCC, 2000MHz, Gain = 2, VOS = 0V, TA = 25C
TA = 85C
8 12
5535 G10
5200 4800 VCC = 5V 4400 VCC = 6V 4000 VCC = 4V 3600 3200 VCC = 3V 2800 2400 2000 1600 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 8 12 RF INPUT POWER (dBm)
5535 G11
Typical Detector Characteristics, 2000MHz, Gain = 4, VOS = 0V
VCC = 3.6V
TA = -40C
TA = 25C
1600 1200 800 400 TA = 85C
VOS = 0V
8 12
5535 G12
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5535 G13
Time Domain Response at fRF = 1900MHz, PRF = -10dBm
100ns/DIV
5535 G14
TA = 25C VCC = 3.6V GAIN = 2 VOS = 0V
100ns/DIV
5535 G15
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LTC5535 TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power at 600MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V
VOUT SLOPE (mV/dB)
100
100
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
TA = -40C 10 TA = 85C TA = 25C
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
VOUT Slope vs RF Input Power at 3000MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
100
100
VOUT SLOPE (mV/dB)
10
TA = -40C TA = 85C
TA = 25C
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
VOUT Slope vs RF Input Power at 6000MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V
1000
VOUT SLOPE (mV/dB)
100
VOUT SLOPE (mV/dB)
10
TA = -40C TA = 85C
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
UW
5
5535 G16
(RLOAD = 1k = RA + RB) VOUT Slope vs RF Input Power at 2000MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V
VOUT Slope vs RF Input Power at 1000MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V
100
TA = -40C 10 TA = 85C TA = 25C
TA = -40C 10 TA = 85C TA = 25C
10
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
5
10
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
5
10
5535 G17
5535 G18
VOUT Slope vs RF Input Power at 4000MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V 1000
VOUT Slope vs RF Input Power at 5000MHz
VCC = 3.6V GAIN = 2 VOS = 0V
100
10
TA = -40C TA = 85C
TA = 25C
10
TA = -40C TA = 85C
TA = 25C
5
10
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
5
10
0 -30 -25 -20 -15 -10 -5 0 RF INPUT POWER (dBm)
5
10
5535 G19
5535 G20
5535 G21
VOUT Slope vs RF Input Power at 7000MHz
VCC = 3.6V GAIN = 2 VOS = 0V
100
TA = 25C
10
TA = -40C TA = 85C
TA = 25C
5
10
0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm)
5
10
5535 G22
5535 G23
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LTC5535 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = -25 dBm, VCC = 3.6V, TA = 25C) FREQUENCY GHz 0.600 0.728 0.856 0.984 1.112 1.240 1.368 1.496 1.624 1.752 1.880 2.008 2.136 2.264 2.392 2.520 2.648 2.776 2.904 3.032 3.160 3.288 3.416 3.544 3.672 3.800 3.928 4.056 4.184 4.312 4.440 4.568 4.696 4.824 4.952 5.080 5.208 5.336 5.464 RESISTANCE () 156.68 135.50 118.45 104.52 92.64 83.35 75.36 68.73 63.20 58.56 54.68 51.40 49.37 47.90 44.55 41.81 39.91 38.28 37.15 35.94 34.94 33.78 32.33 31.04 29.80 28.71 27.85 27.29 26.34 25.48 24.95 24.50 23.95 23.67 23.47 23.40 23.39 23.50 23.72 REACTANCE () -127.09 -122.64 -116.93 -110.97 -105.02 -98.29 -92.40 -86.52 -80.86 -75.65 -70.56 -65.59 -60.89 -57.97 -55.20 -51.32 -47.76 -44.50 -41.35 -38.47 -35.89 -33.39 -30.93 -28.47 -25.80 -23.12 -20.43 -18.04 -15.61 -13.05 -10.41 -7.76 -5.20 -2.56 0.03 2.59 5.13 7.64 10.20
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UW
FREQUENCY GHz 5.592 5.720 5.848 5.976 6.104 6.232 6.360 6.488 6.616 6.744 6.872 7.000
RESISTANCE () 24.09 24.60 25.20 26.02 26.80 27.27 27.22 26.98 26.79 26.75 26.85 27.06
REACTANCE () 12.74 15.21 17.55 19.70 21.46 22.90 24.41 26.35 28.58 31.11 33.76 36.48
S11 Forward Reflection Impedance
0.6000GHz-7.000GHz
5535 TA03
LTC5535 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) 0.600 0.728 0.856 0.984 1.112 1.240 1.368 1.496 1.624 1.752 1.880 2.008 2.136 2.264 2.392 2.520 2.648 2.776 2.904 3.032 3.160 3.288 3.416 3.544 3.672 3.800 3.928 4.056 4.184 4.312 4.440 4.568 4.696 4.824 4.952 5.080 5.208 5.336 5.464 RESISTANCE () 176.00 148.00 125.00 108.00 94.80 83.20 74.60 67.50 61.40 56.80 52.70 49.30 47.10 45.30 42.40 39.60 37.70 36.30 35.10 34.00 33.20 32.10 30.70 29.10 27.70 26.60 25.70 25.00 24.10 23.50 22.90 22.40 22.00 21.70 21.30 21.20 21.20 21.20 21.40 REACTANCE () -174.00 -165.00 -153.00 -143.00 -133.00 -123.00 -115.00 -107.00 -99.00 -92.90 -86.10 -80.00 -74.40 -70.00 -66.70 -62.30 -58.60 -55.00 -51.00 -47.70 -44.60 -41.80 -39.50 -36.70 -33.70 -30.60 -27.70 -25.10 -22.10 -19.50 -17.10 -14.00 -11.40 -8.83 -5.99 -3.45 -0.77 1.70 4.46
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FREQUENCY GHz 5.592 5.720 5.848 5.976 6.104 6.232 6.360 6.488 6.616 6.744 6.872 7.000
RESISTANCE () 21.80 22.10 22.70 23.60 24.20 24.70 24.70 24.30 24.10 24.00 24.00 24.10
REACTANCE () 7.14 9.55 12.00 14.40 15.90 17.80 19.30 21.40 23.80 26.30 28.80 31.40
S11 Forward Reflection Impedance
0.6000GHz-7.000GHz
5535 TA04
7
LTC5535
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 600MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. VOS (Pin 3): VOUT Offset Voltage Adjustment. From 0V to 200mV, VOUT does not change. Above 200mV, VOUT will track VOS. VM (Pin 4): Negative Input to Output Amplifier. VOUT (Pin 5): Detector Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 5.5V. VCC should be bypassed appropriately with ceramic capacitors.
BLOCK DIAGRA
RFSOURCE
12pF TO 200pF (DEPENDING ON APPLICATION)
RFIN
1 4 500 BIAS 7.5k 5pF 7.5k RF DET AMPLIFIER VM
GND 2
8
W
U
U
U
VCC 6 VP
+ -
OUTPUT AMPLIFIER 5 VOUT
500
+ -
20k
+ -
200mV
3
VOS
50A
50A
20k
+
5535 BD
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LTC5535
APPLICATIO S I FOR ATIO
Operation The LTC5535 RF detector integrates several functions to provide RF power detection over frequencies ranging from 600MHz to 7GHz. These functions include an internal frequency compensated output amplifier, an RF Schottky diode peak detector and a level shift amplifier to convert the RF input signal to DC. The LTC5535 has both gain setting and voltage offset adjustment capabilities. Output Amplifier The output amplifier is capable of supplying typically 20mA into a load. The negative terminal VM is brought out to a pin for gain selection. External resistors connected between VOUT and VM (RA) and VM to ground (RB) will set the gain of this amplifier. Gain = 1 + RA/RB The amplifier is not unity gain stable; a minimum gain of two is required. The output amplifier has a bandwidth of 20MHz with a gain of 2. For increased gain applications, the bandwidth is reduced according to the formula: Bandwidth = 40MHz/(Gain) = 40MHz * RB/(RA + RB) For stable operation the gain setting resistors should be low values and the board capacitance on VM should be minimized. RB is recommended to be no greater than 500 for all gain settings.
RFIN
C4 39pF 1 R1 (OPT) 2 3
OFFSET ADJUSTMENT
U
The VOS input controls the DC input voltage to the output amplifier. VOS must be connected to ground if the DC output voltage is not to be changed. The output amplifier is initially trimmed to 200mV (Gain = 2) with VOS connected to ground. The VOS pin is used to change the initial VOUT starting voltage. This function, in combination with gain adjustment enables the LTC5535 output to span the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 200mV. The starting voltage at VOUT for VOS >200mV is: VOUT = 0.5 * VOS * Gain where gain is the output amplifier gain. For a gain of 2, VOUT will exactly track VOS above 200mV. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 50A and drives a 5pF internal peak detector capacitor.
Demo Board Schematic
VCC 2.7V TO 5.5V LTC5535ES6 RFIN VCC 6 5 4 R2 500 1% R3 500 1% GND
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C1 0.1F C2 100pF VOUT RLOAD (OPT)
GND VOUT VOS VM
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LTC5535
APPLICATIO S I FOR ATIO
Applications The LTC5535 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 10dBm for frequencies from 600MHz to 7GHz. The LTC5535 offers increased baseband bandwidth compared to other Schottky diode detectors. Table 1 shows that the baseband (demodulation) bandwidth is typically 12MHz at an RF input signal level of -10dBm. The baseband bandwidth is largely independent of the RF input signal frequency over the range of 600MHz to 7GHz.
Table 1
INPUT LEVEL (dBm) -20 -10 -5 0 OUTPUT BW -3dB (MHz) 12.5 12 11 9.5 FREQUENCY (GHz) 3 3 3 3 GAIN 2 2 2 2
10
U
Operation at higher RF input frequencies is achievable. Consult factory for more information. The LTC5535 can be used as a demodulator for AM and ASK modulated signals. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled data (or audio) output and a DC-coupled RSSI output for signal strength measurements and AGC.
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LTC5535
PACKAGE DESCRIPTIO U
S6 Package 6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62 MAX 0.95 REF 2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID 0.95 BSC 0.30 - 0.45 6 PLCS (NOTE 3) 0.80 - 0.90 0.20 BSC 1.00 MAX DATUM `A' 0.01 - 0.10 0.09 - 0.20 (NOTE 3) 1.90 BSC
S6 TSOT-23 0302
3.85 MAX 2.62 REF
RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR
0.30 - 0.50 REF
NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LTC5535
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5535f LT/TP 07 04 1K * PRINTED IN USA
DESCRIPTION
COMMENTS
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2004

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